BCW30LT1G_16 datasheet(6/7 Pages) ONSEMI

部品番号	BCW30LT1G

部品情報	General Purpose Transistors

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BCW30LT1G, SBCW30LT1G

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6

Figure 17. Thermal Response

t, TIME (ms)

1.0

0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

200

500

1.0k 2.0k

5.0k 10k

20k

50k 100k

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

DUTY CYCLE, D = t1/t2

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1 (SEE AN-569)

ZqJA(t) = r(t) • RqJA

TJ(pk) - TA = P(pk) ZqJA(t)

t1

t2

P(pk)

FIGURE 19

TJ, JUNCTION TEMPERATURE (°C)

104

-4

0

Figure 18. Typical Collector Leakage Current

DESIGN NOTE: USE OF THERMAL RESPONSE DATA

A train of periodical power pulses can be represented by the model

as shown in Figure 19. Using the model and the device thermal

response the normalized effective transient thermal resistance of

Figure 17 was calculated for various duty cycles.

To find ZqJA(t), multiply the value obtained from Figure 17 by the

steady state value RqJA.

Example:

The BCW29LT1 is dissipating 2.0 watts peak under the following

conditions:

t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)

Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of

r(t) is 0.22.

The peak rise in junction temperature is therefore

DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C.

For more information, see AN−569.

10-2

10-1

100

101

102

103

-2

0

+ 20

+ 40

+ 60

+ 80 + 100 + 120 + 140 + 160

VCC = 30 V

ICEO

ICBO

AND

ICEX @ VBE(off) = 3.0 V

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