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BC808-25LT1G データシート(PDF) 2 Page - ON Semiconductor

部品番号 BC808-25LT1G
部品情報  General Purpose Transistors
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BC808-25LT1G データシート(HTML) 2 Page - ON Semiconductor

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BC808−25LT1G, BC808−40LT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −10 mA)
V(BR)CEO
−25
V
Collector−Emitter Breakdown Voltage
(VEB = 0, IC = −10 mA)
V(BR)CES
−30
V
Emitter−Base Breakdown Voltage
(IE = −1.0 mA)
V(BR)EBO
−5.0
V
Collector Cutoff Current
(VCB = −20 V)
(VCB = −20 V, TJ = 150°C)
ICBO
−100
−5.0
nA
mA
ON CHARACTERISTICS
DC Current Gain
(IC = −100 mA, VCE = −1.0 V)
BC808−25LT1G
BC808−40LT1G
(IC = −500 mA, VCE = −1.0 V)
hFE
160
250
40
400
600
Collector−Emitter Saturation Voltage
(IC = −500 mA, IB = −50 mA)
VCE(sat)
−0.7
V
Base −Emitter On Voltage
(IC = −500 mA, IB = −1.0 V)
VBE(on)
−1.2
V
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
fT
100
MHz
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Cobo
10
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device
Specific Marking
Package
Shipping
BC808−25LT1G
5F
SOT−23
(Pb−Free)
3000 / Tape & Reel
SBC808−25LT1G
BC808−40LT1G
5G
SOT−23
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.


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