Si8261BCC-C-IS datasheet(4/40 Pages) SILABS

部品番号	Si8261BCC-C-IS

部品情報	Rail-to-rail output voltage

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Si826x

4

Rev. 1.3

1. Electrical Specifications

Table 1. Recommended Operating Conditions

Parameter

Symbol

Min

Typ

Max

Unit

Supply Voltage

VDD

6.5

—

30

V

Input Current

IF(ON)

(see Figure 1)

6—

30

mA

Operating Temperature (Ambient)

TA

–40

—

125

°C

Table 2. Electrical Characteristics 1

VDD =15V or 30 V, GND=0V, IF =6mA, TA = –40 to +125 °C; typical specs at 25 °C

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

DC Parameters

Supply Voltage2

VDD

(VDD – GND)

6.5

—

30

V

Supply Current (Output High)

IDD

IF =10mA

VDD =15V

VDD =30V

—

1.8

2.0

2.4

2.7

mA

Supply Current (Output Low)

IDD

VF =0V; IF =0 mA

VDD =15V

VDD =30V

—

1.5

1.7

2.1

2.4

mA

Input Current Threshold

IF(TH)

——

3.6

mA

Input Current Hysteresis

IHYS

—0.34

—

mA

Input Forward Voltage (OFF)

VF(OFF)

Measured at ANODE with

respect to CATHODE.

——

1

V

Input Forward Voltage (ON)

VF(ON)

Measured at ANODE with

respect to CATHODE.

1.6

—

2.8

V

Input Capacitance

CI

f=100kHz,

VF =0V,

VF =2V

—

15

—

pF

Output Resistance High

(Source)3

ROH

Si826xAxx devices

—

15

—



Si826xBxx devices (IOH =-1A)

—

2.6

5.1

Output Resistance Low (Sink)3

ROL

Si826xAxx devices

—

5

—

Si826xBxx devices (IOL =2A)

—

0.8

2.0

Notes:

1.

See "8.Ordering Guide" on page 23 for more information.

2.

Minimum value of (VDD - GND) decoupling capacitor is 1 µF.

3.

Both VO pins are required to be shorted together for 4.0 A compliance.

4.

When performing this test, it is recommended that the DUT be soldered down to the PCB to reduce parasitic

inductances, which may cause over-stress conditions due to excessive ringing.

5.

Guaranteed by characterization.

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