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BC847ATT1 データシート(PDF) 1 Page - ON Semiconductor

部品番号 BC847ATT1
部品情報  General Purpose Transistors
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BC847ATT1 データシート(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 3
1
Publication Order Number:
BC847ATT1/D
BC847ATT1, BC847BTT1,
BC847CTT1
General Purpose
Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−75/SOT−416 package which
is designed for low power surface mount applications.
Features
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
Pb−Free Packages are Available
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector−Emitter Voltage
VCEO
45
V
Collector−Base Voltage
VCBO
50
V
Emitter−Base Voltage
VEBO
6.0
V
Collector Current − Continuous
IC
100
mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
FR−4 Board (Note 1)
TA = 25°C
Derated above 25
°C
PD
200
1.6
mW
mW/
°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
RqJA
600
°C/W
Total Device Dissipation,
FR−4 Board (Note 2)
TA = 25°C
Derated above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
RqJA
400
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
1. FR−4 @ min pad.
2. FR−4 @ 1.0
× 1.0 in pad.
CASE 463
SC−75/SOT−416
STYLE 1
MARKING DIAGRAM
3
2
1
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
XXM
G
G
XX = Device Code
M = Date Code
G = Pb−Free Package
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
(Note: Microdot may be in either location)


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