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BD243B データシート(PDF) 2 Page - ON Semiconductor

部品番号 BD243B
部品情報  Complementary Silicon Plastic Power Transistors
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BD243B データシート(HTML) 2 Page - ON Semiconductor

  BD243B_14 Datasheet HTML 1Page - ON Semiconductor BD243B_14 Datasheet HTML 2Page - ON Semiconductor BD243B_14 Datasheet HTML 3Page - ON Semiconductor BD243B_14 Datasheet HTML 4Page - ON Semiconductor BD243B_14 Datasheet HTML 5Page - ON Semiconductor BD243B_14 Datasheet HTML 6Page - ON Semiconductor  
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BD243B, BD243C (NPN), BD244B, BD244C (PNP)
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
BD243B, BD244B
BD243C, BD244C
VCEO(sus)
80
100
Vdc
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
BD243B, BD243C, BD244B, BD244C
ICEO
0.7
mAdc
Collector Cutoff Current
(VCE = 80 Vdc, VEB = 0)
BD243B, BD244B
(VCE = 100 Vdc, VEB = 0)
BD243C, BD244C
ICES
400
400
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
1.0
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.3 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
hFE
30
15
Collector−Emitter Saturation Voltage
(IC = 6.0 Adc, IB = 1.0 Adc)
VCE(sat)
1.5
Vdc
Base−Emitter On Voltage
(IC = 6.0 Adc, VCE = 4.0 Vdc)
VBE(on)
2.0
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
3.0
MHz
Small−Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulsewidth
≤ 300 ms, Duty Cycle ≤ 2.0%.
2. fT = hfe • ftest
80
60
40
20
0
0
20
40
60
80
100
120
140
160
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)


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