データシートサーチシステム |
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BD243B データシート(PDF) 2 Page - ON Semiconductor |
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BD243B データシート(HTML) 2 Page - ON Semiconductor |
2 / 6 page BD243B, BD243C (NPN), BD244B, BD244C (PNP) www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector−Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) BD243B, BD244B BD243C, BD244C VCEO(sus) 80 100 − − Vdc Collector Cutoff Current (VCE = 60 Vdc, IB = 0) BD243B, BD243C, BD244B, BD244C ICEO − 0.7 mAdc Collector Cutoff Current (VCE = 80 Vdc, VEB = 0) BD243B, BD244B (VCE = 100 Vdc, VEB = 0) BD243C, BD244C ICES − − 400 400 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 1.0 mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) hFE 30 15 − − − Collector−Emitter Saturation Voltage (IC = 6.0 Adc, IB = 1.0 Adc) VCE(sat) − 1.5 Vdc Base−Emitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc) VBE(on) − 2.0 Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (Note 2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 − MHz Small−Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 − − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulsewidth ≤ 300 ms, Duty Cycle ≤ 2.0%. 2. fT = hfe • ftest 80 60 40 20 0 0 20 40 60 80 100 120 140 160 Figure 1. Power Derating TC, CASE TEMPERATURE (°C) |
同様の部品番号 - BD243B_14 |
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同様の説明 - BD243B_14 |
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