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MJE5730G データシート(PDF) 3 Page - ON Semiconductor |
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MJE5730G データシート(HTML) 3 Page - ON Semiconductor |
3 / 6 page MJE5730, MJE5731, MJE5731A www.onsemi.com 3 IC, COLLECTOR CURRENT (AMPS) 1.0 0.8 1.4 1.2 0.4 0 0.6 0.2 Figure 3. Base−Emitter Voltage 0.05 0.2 2.0 0.1 0.5 0.3 1.0 0.02 0.03 VBE(sat) @ IC/IB = 5.0 TJ = - 55°C 25 °C 150 °C 1.0 0 TC, CASE TEMPERATURE (°C) 0 50 175 0.8 0.6 0.4 0.2 75 100 125 Figure 4. Normalized Power Derating SECOND BREAKDOWN DERATING THERMAL DERATING 25 150 10 5.0 Figure 5. Forward Bias Safe Operating Area VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 5.0 2.0 0.5 0.01 30 100 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT dc 500 ms 0.05 10 20 1.0ms 200 300 500 1.0 0.2 50 0.1 0.02 TC = 25°C 100 ms MJE5730 MJE5731 MJE5732 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150 _C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) ≤ 150_C. TJ(pk) may be calculated from the data in Figure 6. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. t, TIME (ms) 1.0 0.01 1 k 0.3 0.2 0.07 RqJC(t) = r(t) RqJC RqJC = 3.125°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.01 0.7 Figure 6. Thermal Response 0.5 0.1 0.05 0.03 0.02 0.02 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.2 SINGLE PULSE D = 0.5 0.05 0.1 0.02 0.01 |
同様の部品番号 - MJE5730G |
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同様の説明 - MJE5730G |
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