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MJE5730G データシート(PDF) 3 Page - ON Semiconductor

部品番号 MJE5730G
部品情報  High Voltage PNP Silicon Plastic Power Transistors
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJE5730G データシート(HTML) 3 Page - ON Semiconductor

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MJE5730, MJE5731, MJE5731A
www.onsemi.com
3
IC, COLLECTOR CURRENT (AMPS)
1.0
0.8
1.4
1.2
0.4
0
0.6
0.2
Figure 3. Base−Emitter Voltage
0.05
0.2
2.0
0.1
0.5
0.3
1.0
0.02 0.03
VBE(sat) @ IC/IB = 5.0
TJ = - 55°C
25
°C
150
°C
1.0
0
TC, CASE TEMPERATURE (°C)
0
50
175
0.8
0.6
0.4
0.2
75
100
125
Figure 4. Normalized Power Derating
SECOND BREAKDOWN
DERATING
THERMAL
DERATING
25
150
10
5.0
Figure 5. Forward Bias Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0
2.0
0.5
0.01
30
100
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
dc
500
ms
0.05
10
20
1.0ms
200 300
500
1.0
0.2
50
0.1
0.02
TC = 25°C
100
ms
MJE5730
MJE5731
MJE5732
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150
_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
TJ(pk)
≤ 150_C. TJ(pk) may be calculated from the data in
Figure 6. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
t, TIME (ms)
1.0
0.01
1 k
0.3
0.2
0.07
RqJC(t) = r(t) RqJC
RqJC = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
0.7
Figure 6. Thermal Response
0.5
0.1
0.05
0.03
0.02
0.02
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
0.2
SINGLE PULSE
D = 0.5
0.05
0.1
0.02
0.01


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