AD8236ARMZ1 datasheet(8/21 Pages) AD

部品番号	AD8236ARMZ1

部品情報	40 關A Micropower Instrumentation Amplifier with Zero Crossover Distortion

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AD8236

Rev. 0 | Page 7 of 20

ABSOLUTE MAXIMUM RATINGS

Table 4.

Parameter

Rating

Supply Voltage

6 V

Power Dissipation

See Figure 3

Output Short-Circuit Current

55 mA

Input Voltage (Common Mode)

±VS

Differential Input Voltage

±VS

Storage Temperature Range

−65°C to +125°C

Operating Temperature Range

−40°C to +125°C

Lead Temperature (Soldering, 10 sec)

300°C

Junction Temperature

140°C

θJA (4-Layer JEDEC Standard Board)

8-Lead MSOP

135°C/W

Package Glass Transition Temperature

8-Lead MSOP

140°C

ESD

Human Body Model

2 kV

Charge Device Model

1 kV

Machine Model

200 V

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

MAXIMUM POWER DISSIPATION

The maximum safe power dissipation in the package of the

AD8236 is limited by the associated rise in junction temperature

(TJ) on the die. The plastic encapsulating the die locally reaches

the junction temperature. At approximately 140°C, which is the

glass transition temperature, the plastic changes its properties.

Even temporarily exceeding this temperature limit may change

the stresses that the package exerts on the die, permanently

shifting the parametric performance of the AD8236.

The still-air thermal properties of the package and PCB (θJA),

the ambient temperature (TA), and the total power dissipated in

the package (PD) determine the junction temperature of the die.

The junction temperature is calculated as

TJ = TA + (PD × θJA)

The power dissipated in the package (PD) is the sum of the

quiescent power dissipation and the power dissipated in the

package due to the load drive for all outputs. The quiescent

power is the voltage between the supply pins (VS) times the

quiescent current (IS). Assuming the load (RL) is referenced to

midsupply, the total drive power is VS/2 × IOUT, some of which

is dissipated in the package and some in the load (VOUT × IOUT).

The difference between the total drive power and the load power is

the drive power dissipated in the package.

PD = Quiescent Power + (Total Drive Power – Load Power)

()

L

OUT

L

OUT

S

D

R

V

R

V

I

V

P

2

–

2

⎟⎟

⎠

⎞

⎜⎜

⎝

⎛

×

+

×

=

RMS output voltages should be considered. If RL is referenced to

−VS, as in single-supply operation, the total drive power is VS ×

IOUT. If the rms signal levels are indeterminate, consider the worst

case, when VOUT = VS/4 for RL to midsupply

() (

)

L

S

D

R

/

V

I

V

P

2

4

+

×

=

In single-supply operation with RL referenced to −VS, worst case

is VOUT = VS/2.

Airflow increases heat dissipation, effectively reducing θJA. In

addition, more metal directly in contact with the package leads

from metal traces, through holes, ground, and power planes

reduces the θJA.

Figure 3 shows the maximum safe power dissipation in the package

vs. the ambient temperature for the 8-lead MSOP on a 4-layer

JEDEC standard board. θJA values are approximations.

2.00

0

–40

120

AMBIENT TEMPERATURE (°C)

1.75

1.50

1.25

1.00

0.75

0.50

0.25

–20

0

20

40

60

80

100

Figure 3. Maximum Power Dissipation vs. Ambient Temperature

ESD CAUTION

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