© Semiconductor Components Industries, LLC, 2013

September, 2013 − Rev. 6

1

Publication Order Number:

PZT3904T1/D

PZT3904T1G

General Purpose Transistor

NPN Silicon

Features

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector − Emitter Voltage

40

Vdc

Collector − Base Voltage

60

Vdc

Emitter − Base Voltage

6.0

Vdc

Collector Current − Continuous

200

mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation (Note 1)

1.5

12

W

mW/

°C

Thermal Resistance

Junction−to−Ambient (Note 1)

83.3

°C/W

Thermal Resistance

Junction−to−Lead #4

35

°C/W

Junction and Storage Temperature

Range

− 55 to +150

°C

http://onsemi.com

COLLECTOR

2, 4

1

BASE

3

EMITTER

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Device

Package

ORDERING INFORMATION

PZT3904T1G

SOT−223

(Pb−Free)

1,000 / Tape & Reel

SOT−223

CASE 318E

STYLE 1

MARKING DIAGRAM

1

AYW

1AM

G

G

1AM

= Specific Device Code

A

= Assembly Location

Y

= Year

W

= Work Week

G

= Pb−Free Package

(Note: Microdot may be in either location)

SPZT3904T1G

SOT−223

(Pb−Free)

1,000 / Tape & Reel

1

2

3

4