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ADRF5020BCCZN データシート(PDF) 5 Page - Analog Devices

部品番号 ADRF5020BCCZN
部品情報  Microwave radios and very small aperture terminals
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メーカー  AD [Analog Devices]
ホームページ  http://www.analog.com
Logo AD - Analog Devices

ADRF5020BCCZN データシート(HTML) 5 Page - Analog Devices

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Data Sheet
ADRF5020
Rev. A | Page 5 of 12
ABSOLUTE MAXIMUM RATINGS
For recommended operating conditions, see Table 1.
Table 2.
Parameter
Rating
Supply Voltage
Positive
−0.3 V to +5.5 V
Negative
−2.75 V to +0.3 V
Digital Control Input Voltage
−0.3 V to VDD + 0.3 V
RF Input Power1 (f = 600 MHz to 30 GHz,
TCASE) = 85°C)
Through Path
27 dBm
Terminated Path
25 dBm
Hot Switching
21 dBm
Temperature
Junction (TJ)
135°C
Storage
−65°C to +150°C
Reflow (MSL3 Rating)2
260°C
Junction to Case Thermal Resistance (θJC)
Through Path
420°C/W
Terminated Path
160°C/W
ESD Sensitivity
HBM
1 kV (Class 1)
1
For power derating at frequencies less than 600 MHz, see Figure 2 to Figure 4.
2
See the Ordering Guide section.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Only one absolute maximum rating can be applied at any one
time.
POWER DERATING CURVES
4
–14
–12
–10
–8
–6
–4
–2
0
2
FREQUENCY (Hz)
10k
1M
100M
10G
100k
10M
1G
Figure 2. Power Derating for Through Path vs. Frequency, TCASE = 85°C
4
–14
–12
–10
–8
–6
–4
–2
0
2
FREQUENCY (Hz)
10k
1M
100M
10G
100k
10M
1G
Figure 3. Power Derating for Terminated Path vs. Frequency, TCASE = 85°C
4
–14
–12
–10
–8
–6
–4
–2
0
2
FREQUENCY (Hz)
10k
1M
100M
10G
100k
10M
1G
Figure 4. Power Derating for Hot Switching vs. Frequency, TCASE = 85°C
ESD CAUTION


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