データシートサーチシステム |
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MTB095N10KRN3 データシート(PDF) 1 Page - Cystech Electonics Corp. |
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MTB095N10KRN3 データシート(HTML) 1 Page - Cystech Electonics Corp. |
1 / 9 page CYStech Electronics Corp. Spec. No. : C714N3 Issued Date : 2017.01.13 Revised Date : Page No. : 1/9 MTB095N10KRN3 Preliminary CYStek Product Specification 100V N-Channel Enhancement Mode MOSFET MTB095N10KRN3 BVDSS 100V ID@ TA=25°C, VGS=10V 2.3A RDSON@VGS=10V, ID=1.5A 100mΩ(typ) Features RDSON@VGS=4.5V, ID=1A 140mΩ(typ) • Simple drive requirement • Small package outline • ESD protected gate • Pb-free lead plating and halogen-free package Symbol Outline SOT-23 MTB095N10KRN3 Ordering Information Device Package Shipping MTB095N10KRN3-0-T1-G SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel D G:Gate S:Source D:Drain G S Environment friendly grade : S for RoHS compliant products, G for RoHS compliant Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name |
同様の部品番号 - MTB095N10KRN3 |
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同様の説明 - MTB095N10KRN3 |
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