MTB030N10RH8 datasheet(7/10 Pages) CYSTEKEC

部品番号	MTB030N10RH8

部品情報	N-Channel Enhancement Mode Power MOSFET

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メーカー	CYSTEKEC [Cystech Electonics Corp.]

ホームページ	http://www.cystekec.com

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7 / 10 page

CYStech Electronics Corp.

Spec. No. : C053H8

Issued Date : 2017.01.23

Revised Date :

Page No. : 7/ 10

MTB030N10RH8

CYStek Product Specification

Typical Characteristics(Cont.)

Typical Transfer Characteristics

0

5

10

15

20

25

30

35

40

45

50

01

23

45

VGS, Gate-Source Voltage(V)

VDS=10V

Single Pulse Maximum Power Dissipation

0

50

100

150

200

250

300

350

400

450

500

0.0001

0.001

0.01

0.1

1

10

Pulse Width(s)

TJ(MAX)=150°C

TC=25°C

RθJC=5°C/W

Transient Thermal Response Curves

0.01

0.1

1

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

t1, Square Wave Pulse Duration(s)

Single Pulse

0.02

0.05

0.1

0.2

D=0.5

1.RθJC(t)=r(t)*RθJC

2.Duty Factor, D=t1/t2

3.TJM-TC=PDM*RθJC(t)

4.RθJC=5 °C/W

同様の部品番号 - MTB030N10RH8

メーカー	部品番号	データシート	部品情報
Cystech Electonics Corp...	MTB030N10RE3	403Kb / 8P	N-Channel Enhancement Mode Power MOSFET
	MTB030N10RJ3	637Kb / 9P	N-Channel Enhancement Mode Power MOSFET
	MTB030N10RJ3-0-T3-G	637Kb / 9P	N-Channel Enhancement Mode Power MOSFET
	MTB030N10RQ8	484Kb / 9P	N-Channel Enhancement Mode Power MOSFET
	MTB030N10RQ8-0-T3-G	484Kb / 9P	N-Channel Enhancement Mode Power MOSFET

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同様の説明 - MTB030N10RH8

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