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ADuM4136BRWZ-RL データシート(PDF) 4 Page - Analog Devices |
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ADuM4136BRWZ-RL データシート(HTML) 4 Page - Analog Devices |
4 / 17 page Data Sheet ADuM4136 Rev. 0 | Page 3 of 16 SPECIFICATIONS ELECTRICAL CHARACTERISTICS Low-side voltages are referenced to VSS1. High-side voltages are referenced to GND2; 2.5 V ≤ VDD1 ≤ 6 V, 12 V ≤ VDD2 ≤ 35 V, and TJ = −40°C to +125°C. All minimum/maximum specifications apply over the entire recommended operating range, unless otherwise noted. All typical specifications are at TJ = 25°C, VDD1 = 5.0 V, VSS2 = 0 V, and VDD2 = 15 V. Table 1. Parameter Symbol Min Typ Max Unit Test Conditions/Comments DC SPECIFICATIONS High-Side Power Supply Input Voltage VDD2 VDD2 12 35 V VDD2 − VSS2 ≤ 35 V VSS2 VSS2 −15 0 V Input Current, Quiescent Ready high VDD2 IDD2 (Q) 3.62 4.49 mA VSS2 ISS2 (Q) 4.82 6.21 mA Logic Supply VDD1 Input Voltage VDD1 2.5 6 V Input Current IDD1 Output Low 1.78 2.17 mA Output signal low Output High 4.78 5.89 mA Output signal high Logic Inputs (VI+, VI−, RESET) Input Current (VI+, VI− Only) II −1 +0.01 +1 μA Input Voltage Logic High VIH 0.7 × VDD1 V 2.5 V ≤ VDD1 − VSS1 ≤ 5 V 3.5 V VDD1 − VSS1 > 5 V Logic Low VIL 0.3 × VDD1 V 2.5 V ≤ VDD1 − VSS1 ≤ 5 V 1.5 V VDD1 − VSS1 > 5 V RESET Internal Pull-Down RRESET_PD 300 kΩ Undervoltage Lockout (UVLO) VDD1 Positive Going Threshold VVDD1UV+ 2.43 2.49 V Negative Going Threshold VVDD1UV− 2.29 2.34 V Hysteresis VVDD1UVH 0.09 V VDD2 Positive Going Threshold VVDD2UV+ 11.6 12.0 V Negative Going Threshold VVDD2UV− 10.4 11.2 V Hysteresis VVDD2UVH 0.4 V FAULT Pull-Down FET Resistance RFAULT_PD_FET 11 50 Ω Tested at 5 mA READY Pull-Down FET Resistance RRDY_PD_FET 11 50 Ω Tested at 5 mA Desaturation (DESAT) Desaturation Detect Comparator Voltage VDESAT, TH 8.66 9.2 9.57 V Internal Current Source IDESAT_SRC 466 537 592 μA Thermal Shutdown (TSD) TSD Positive Edge TTSD_POS 155 °C TSD Hysteresis TTSD_HYST 20 °C Internal NMOS Gate On Resistance RDSON_N 322 625 mΩ Tested at 250 mA 325 625 mΩ Tested at 1 A Internal PMOS Gate On Resistance RDSON_P 475 975 mΩ Tested at 250 mA 480 975 mΩ Tested at 1 A Soft Shutdown NMOS On Resistance RDSON_FAULT 10.4 22 Ω Tested at 250 mA Peak Current 4.61 A VDD2 = 12 V, 2 Ω gate resistance SWITCHING SPECIFICATIONS Pulse Width1 PW 50 ns CL = 2 nF, VDD2 = 15 V, RGON2 = RGOFF2 = 3.9 Ω RESET Debounce tDEB_RESET 500 615 700 ns |
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