BC847BPDXV6T1G datasheet(1/6 Pages) ONSEMI

部品番号	BC847BPDXV6T1G

部品情報	NPN/PNP Dual General Purpose Transistor

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May, 2013 − Rev. 2

1

Publication Order Number:

BC847BPDXV6T1/D

BC847BPDXV6,

SBC847BPDXV6

NPN/PNP Dual General

Purpose Transistor

This transistor is designed for general purpose amplifier

applications. It is housed in the SOT−563 which is designed for low

power surface mount applications.

Features

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS − NPN

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

VCEO

45

V

Collector−Base Voltage

VCBO

50

V

Emitter−Base Voltage

VEBO

6.0

V

Collector Current −

Continuous

IC

100

mAdc

MAXIMUM RATINGS − PNP

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

VCEO

−45

V

Collector−Base Voltage

VCBO

−50

V

Emitter−Base Voltage

VEBO

−5.0

V

Collector Current −

Continuous

IC

−100

mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Symbol

Max

Unit

Total Device Dissipation (Note 1)

TA = 25°C

Derate above 25°C

PD

357

2.9

mW

mW/°C

Thermal Resistance −

Junction-to-Ambient (Note 1)

RqJA

350

°C/W

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

Total Device Dissipation (Note 1)

TA = 25°C

Derate above 25°C

PD

500

4.0

mW

mW/°C

Thermal Resistance −

Junction-to-Ambient (Note 1)

RqJA

250

°C/W

Junction and Storage Temperature Range

TJ, Tstg

−55 to

+150

°C

1. FR−4 @ Minimum Pad

SOT−563

CASE 463A

1 2

3

6

5 4

Q1

(1)

(2)

(3)

(4)

(5)

(6)

Q2

ORDERING INFORMATION

http://onsemi.com

MARKING DIAGRAM

Device

Package

Shipping†

BC847BPDXV6T1G SOT−563

(Pb−Free)

4 mm pitch

4000/Tape & Reel

SBC847BPDXV6T1G SOT−563

(Pb−Free)

2 mm pitch

4000/Tape & Reel

BC847BPDX6T1

4F = Specific Device Code

M = Month Code

G

= Pb−Free Package

4F MG

G

1

BC847BPDXV6T5G SOT−563

(Pb−Free)

2 mm pitch

8000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

(Note: Microdot may be in either location)

同様の部品番号 - BC847BPDXV6T1G

メーカー	部品番号	データシート	部品情報
ON Semiconductor	BC847BPDXV6T1G	82Kb / 8P	Dual General Purpose Transistor September, 2005 ??Rev. 1

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