© Semiconductor Components Industries, LLC, 1997

October, 2016 − Rev. 14

Publication Order Number:

BAT54LT1/D

BAT54L

Schottky Barrier Diodes

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

Compliant

Rating

Symbol

Value

Unit

Reverse Voltage

30

Volts

Forward Power Dissipation

Derate above 25

°C

200

2.0

mW

mW/

°C

Forward Current (DC)

200 Max

mA

Non−Repetitive Peak Forward Current

600

mA

Repetitive Peak Forward Current

Pulse Wave = 1 sec,

Duty Cycle = 66%

300

mA

Junction Temperature

− 55 to +125

°C

Storage Temperature Range

− 55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

30 VOLTS

SILICON HOT−CARRIER

DETECTOR AND SWITCHING

DIODES

MARKING DIAGRAM

3

CATHODE

1

ANODE

SOT−23 (TO−236)

CASE 318

STYLE 8

(Note: Microdot may be in either location)

Device

Package

ORDERING INFORMATION

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

BAT54LT1G

SOT−23

(Pb−Free)

3,000 /

Tape & Reel

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

JV3

= Device Code

M

= Date Code

G

= Pb−Free Package

1

JV3 M

G

G

NSVBAT54LT1G

SOT−23

(Pb−Free)

3,000 /

Tape & Reel

www.onsemi.com