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FDS6990 データシート(PDF) 5 Page - Fairchild Semiconductor |
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FDS6990 データシート(HTML) 5 Page - Fairchild Semiconductor |
5 / 6 page FDS6990S Rev B (W) Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6990S. Figure 12. FDS6990S SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6990A). Figure 13. Non-SyncFET (FDS6990A) body diode reverse recovery characteristic. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. 10ns/div 10ns/div 0.00001 0.0001 0.001 0.01 0.1 0 10 20 30 VDS, REVERSE VOLTAGE (V) 125 oC 25 oC 0V 0V |
同様の部品番号 - FDS6990 |
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同様の説明 - FDS6990 |
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