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SI5415AEDU データシート(PDF) 6 Page - Vishay Siliconix |
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SI5415AEDU データシート(HTML) 6 Page - Vishay Siliconix |
6 / 9 page Si5415AEDU www.vishay.com Vishay Siliconix S13-1673-Rev. A, 29-Jul-13 6 Document Number: 62889 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62837. 10-3 10-2 0 0 0 1 0 1 1 10-1 10-4 100 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 90 °C/W 3. TJM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 10-3 10-2 1 10-1 10-4 0.2 0.1 0.05 0.02 Duty Cycle = 0.5 Square Wave Pulse Duration (s) Single Pulse 1 0.1 |
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同様の説明 - SI5415AEDU |
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