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SI7111EDN データシート(PDF) 1 Page - Vishay Siliconix |
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SI7111EDN データシート(HTML) 1 Page - Vishay Siliconix |
1 / 7 page Si7111EDN www.vishay.com Vishay Siliconix S16-1520-Rev. A, 01-Aug-16 1 Document Number: 67807 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P-Channel 30 V (D-S) MOSFET FEATURES • TrenchFET® Gen III p-channel power MOSFET •RDS(on) rating at VGS = -2.5 V • 100 % Rg and UIS tested • Typical ESD protection: 4600 V HBM • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Battery switch • Adapter and charger switch •Load switch • Battery management in mobile devices Notes a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 81 °C/W. g. TC = 25 °C. PRODUCT SUMMARY VDS (V) -30 RDS(on) max. () at VGS = -4.5 V 0.00855 RDS(on) max. () at VGS = -2.5 V 0.01600 Qg typ. (nC) 30.5 ID (A) 60 a, g Configuration Single PowerPAK® 1212-8 Single Top View 1 3.3 mm 3.3 mm Bottom View 1 S 1 S 2 S 3 S 4 G D 8 D 7 D 6 D 5 P-Channel MOSFET S D G ORDERING INFORMATION Package PowerPAK 1212-8 Lead (Pb)-free and halogen-free Si7111EDN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-source voltage VDS -30 V Gate-source voltage VGS ± 12 Continuous drain current (TJ = 150 °C) TC = 25 °C ID 60 a A TC = 70 °C 49.3 TA = 25 °C 17.4 a, b TA = 70 °C 13.9 a, b Pulsed drain current (t = 100 μs) IDM 150 Continuous source-drain diode current TC = 25 °C IS 47.3 TA = 25 °C 3.7 a, b Single pulse avalanche current L = 0.1 mH IAS 20 Single pulse avalanche energy EAS 20 mJ Maximum power dissipation TC = 25 °C PD 52 W TC = 70 °C 33.3 TA = 25 °C 4.1 a, b TA = 70 °C 2.6 a, b Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) c 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient a t xx s RthJA 23 30 °C/W Maximum junction-to-case (drain) Steady state RthJF 1.9 2.4 |
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