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SI7111EDN データシート(PDF) 1 Page - Vishay Siliconix

部品番号 SI7111EDN
部品情報  P-Channel 30 V (D-S) MOSFET
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メーカー  VISHAY [Vishay Siliconix]
ホームページ  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

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Si7111EDN
www.vishay.com
Vishay Siliconix
S16-1520-Rev. A, 01-Aug-16
1
Document Number: 67807
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P-Channel 30 V (D-S) MOSFET
FEATURES
• TrenchFET® Gen III p-channel power MOSFET
•RDS(on) rating at VGS = -2.5 V
• 100 % Rg and UIS tested
• Typical ESD protection: 4600 V HBM
• Material
categorization:
for
definitions
of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Battery switch
• Adapter and charger switch
•Load switch
• Battery
management
in
mobile
devices
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 81 °C/W.
g. TC = 25 °C.
PRODUCT SUMMARY
VDS (V)
-30
RDS(on) max. () at VGS = -4.5 V
0.00855
RDS(on) max. () at VGS = -2.5 V
0.01600
Qg typ. (nC)
30.5
ID (A)
60 a, g
Configuration
Single
PowerPAK® 1212-8 Single
Top View
1
3.3
mm
3.3
mm
Bottom View
1
S
1
S
2
S
3
S
4
G
D
8
D
7
D
6
D
5
P-Channel MOSFET
S
D
G
ORDERING INFORMATION
Package
PowerPAK 1212-8
Lead (Pb)-free and halogen-free
Si7111EDN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-source voltage
VDS
-30
V
Gate-source voltage
VGS
± 12
Continuous drain current (TJ = 150 °C)
TC = 25 °C
ID
60 a
A
TC = 70 °C
49.3
TA = 25 °C
17.4 a, b
TA = 70 °C
13.9 a, b
Pulsed drain current (t = 100 μs)
IDM
150
Continuous source-drain diode current
TC = 25 °C
IS
47.3
TA = 25 °C
3.7 a, b
Single pulse avalanche current
L = 0.1 mH
IAS
20
Single pulse avalanche energy
EAS
20
mJ
Maximum power dissipation
TC = 25 °C
PD
52
W
TC = 70 °C
33.3
TA = 25 °C
4.1 a, b
TA = 70 °C
2.6 a, b
Operating junction and storage temperature range
TJ, Tstg
-55 to +150
°C
Soldering recommendations (peak temperature) c
260
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum junction-to-ambient a
t
 xx s
RthJA
23
30
°C/W
Maximum junction-to-case (drain)
Steady state
RthJF
1.9
2.4


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