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BAS16XV2T5G データシート(PDF) 1 Page - ON Semiconductor |
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BAS16XV2T5G データシート(HTML) 1 Page - ON Semiconductor |
1 / 4 page © Semiconductor Components Industries, LLC, 2014 December, 2014 − Rev. 8 1 Publication Order Number: BAS16XV2T1/D BAS16XV2 Switching Diode Features • High−Speed Switching Applications • Lead Finish: 100% Matte Sn (Tin) • Qualified Reflow Temperature: 260°C • Extremely Small SOD−523 Package • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 100 V Continuous Forward Current IF 200 mA Peak Forward Surge Current IFM(surge) 500 mA Repetitive Peak Forward Current (Pulse Wave = 1 sec, Duty Cycle = 66%) IFRM 500 mA Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 1 ms t = 1 ms t = 1 s IFSM 4.0 1.0 0.5 A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation, (Note 1) TA = 25°C Derate above 25 °C PD 200 1.57 mW mW/ °C Thermal Resistance, Junction−to−Ambient RθJA 635 °C/W Junction and Storage Temperature TJ, Tstg −55 to 150 °C 1. FR-5 Minimum Pad. www.onsemi.com 1 CATHODE 2 ANODE Device Package Shipping† ORDERING INFORMATION †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. SOD−523 CASE 502 A6 = Specific Device Code M = Date Code G = Pb−Free Package MARKING DIAGRAM 1 2 A6 M G G 12 BAS16XV2T1G SOD−523 (Pb−Free) 3000 / Tape & Reel BAS16XV2T5G SOD−523 (Pb−Free) 8000 / Tape & Reel (Note: Microdot may be in either location) SBAS16XV2T1G SOD−523 (Pb−Free) 3000 /T ape & Reel |
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