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MMBD6100LT3G データシート(PDF) 1 Page - ON Semiconductor

部品番号 MMBD6100LT3G
部品情報  Monolithic Dual Switching Diode
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMBD6100LT3G データシート(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 4
1
Publication Order Number:
MMBD6100LT1/D
MMBD6100LT1G
Monolithic Dual
Switching Diode
Features
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
70
Vdc
Forward Current
IF
200
mAdc
Peak Forward Surge Current
IFM(surge)
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation, FR−5 Board
(Note 1)
TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, Junction−to−Ambient
RqJA
556
°C/W
Total Device Dissipation Alumina Substrate
(Note 2)
TA = 25°C
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance, Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0
 0.75  0.062 in.
2. Alumina = 0.4
 0.3  0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 mAdc)
V(BR)
70
Vdc
Reverse Voltage Leakage Current
(VR = 50 Vdc)
(For each individual diode while the
second diode is unbiased)
IR
0.1
mAdc
Forward Voltage
(IF = 1.0 mAdc)
(IF = 100 mAdc)
VF
0.55
0.8
0.7
1.1
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc)
(Figure 1)
trr
4.0
ns
Capacitance
(VR = 0 V)
C
2.5
pF
Product parametric performance is indicated in the Electrical Characteristics for
the listed test conditions, unless otherwise noted. Product performance may not
be indicated by the Electrical Characteristics if operated under different
conditions.
Device
Package
Shipping
ORDERING INFORMATION
SOT−23
CASE 318
STYLE 9
3
CATHODE
2
ANODE
ANODE
1
1
5B M
G
G
5B
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
MMBD6100LT3G
SOT−23
(Pb−Free)
10,000/Tape & Reel
3000/Tape & Reel
MMBD6100LT1G
SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
1
2
3
MARKING DIAGRAM
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