データシートサーチシステム |
|
MMBD6100LT3G データシート(PDF) 1 Page - ON Semiconductor |
|
MMBD6100LT3G データシート(HTML) 1 Page - ON Semiconductor |
1 / 3 page © Semiconductor Components Industries, LLC, 1994 October, 2016 − Rev. 4 1 Publication Order Number: MMBD6100LT1/D MMBD6100LT1G Monolithic Dual Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation, FR−5 Board (Note 1) TA = 25°C Derate above 25 °C PD 225 1.8 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25 °C PD 300 2.4 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 mAdc) V(BR) 70 − Vdc Reverse Voltage Leakage Current (VR = 50 Vdc) (For each individual diode while the second diode is unbiased) IR − 0.1 mAdc Forward Voltage (IF = 1.0 mAdc) (IF = 100 mAdc) VF 0.55 0.8 0.7 1.1 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) trr − 4.0 ns Capacitance (VR = 0 V) C − 2.5 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Device Package Shipping† ORDERING INFORMATION SOT−23 CASE 318 STYLE 9 3 CATHODE 2 ANODE ANODE 1 1 5B M G G 5B = Specific Device Code M = Date Code* G = Pb−Free Package *Date Code orientation and/or overbar may vary depending upon manufacturing location. MMBD6100LT3G SOT−23 (Pb−Free) 10,000/Tape & Reel 3000/Tape & Reel MMBD6100LT1G SOT−23 (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (Note: Microdot may be in either location) 1 2 3 MARKING DIAGRAM www.onsemi.com |
同様の部品番号 - MMBD6100LT3G |
|
同様の説明 - MMBD6100LT3G |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |