データシートサーチシステム |
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LMX2350 データシート(PDF) 6 Page - National Semiconductor (TI) |
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LMX2350 データシート(HTML) 6 Page - National Semiconductor (TI) |
6 / 21 page Charge Pump Current Specification Definitions DS100831-7 I1 = CP sink current at VDo =Vp − ∆V I2 = CP sink current at VDo = Vp/2 I3 = CP sink current at VDo = ∆V I4 = CP source current at VDo =Vp − ∆V I5 = CP source current at VDo = Vp/2 I6 = CP source current at VDo = ∆V ∆V = Voltage offset from positive and negative rails. Dependent on VCO tuning range relative to VCC and ground. Typical values are between 0.5V and 1.0V. Note 5: IDo vs VDo = Charge Pump Output Current magnitude variation vs Voltage = [1⁄2 * {||1| − ||3|}]/[1⁄2 * {||1| + ||3|}] * 100% and [1⁄2 * {||4| − ||6|}]/[1⁄2 * {||4| + ||6|}] * 100% Note 6: IDo-sink vs IDo-source = Charge Pump Output Current Sink vs Source Mismatch = [||2| − ||5|]/[1⁄2 * {||2| + ||5|}] * 100% Note 7: IDo vs TA = Charge Pump Output Current magnitude variation vs Temperature = [||2 @ temp| − ||2 @ 25˚C|]/||2 @ 25˚C| * 100% and [||5 @ temp| − ||5 @ 25˚C|]/||5 @ 25˚C| * 100% www.national.com 6 |
同様の部品番号 - LMX2350 |
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同様の説明 - LMX2350 |
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