LM2335 datasheet(5/22 Pages) NSC

部品番号	LM2335

部品情報	PLLatinum??Low Power Dual Frequency Synthesizer for RF Personal Communications

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Absolute Maximum Ratings (Notes 1, 2)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Power Supply Voltage

V

CC

−0.3V to +6.5V

V

P

−0.3V to +6.5V

Voltage on Any Pin

with GND = 0V (V

I)

−0.3V to V

CC +0.3V

Storage Temperature Range (T

S)

−65˚C to +150˚C

Lead Temperature (solder 4 sec.) (T

L)

+260˚C

Recommended Operating

Conditions

Power Supply Voltage

V

CC

2.7V to 5.5V

V

P

V

CC to +5.5V

Operating Temperature (T

A)

−40˚C to +85˚C

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to

the device may occur. Recommended Operating Conditions indicate condi-

tions for which the device is intended to be functional, but do not guarantee

specific performance limits. For guaranteed specifications and test condi-

tions, see the Electrical Characteristics. The guaranteed specifications apply

only for the test conditions listed.

Note 2: This device is a high performance RF integrated circuit with an ESD

rating <2 keV and is ESD sensitive. Handling and assembly of this device

should only be done at ESD protected work stations.

Electrical Characteristics

V

CC = 5.0V, VP = 5.0V; TA = 25˚C, except as specified

Symbol

Parameter

Conditions

Value

Units

Min

Typ

Max

I

CC

Power Supply

LMX2335L

V

CC = 2.7V to 5.5V

4.0

5.2

mA

Current

RF1 and RF2

I

CC

LMX2335L RF1 only

2.0

2.6

mA

I

CC

LMX2336L

5.5

7

mA

RF1 and RF2

LMX2336L RF1 only

3.3

4.3

mA

f

IN 1

Operating

Frequency

LMX2335L

0.100

1.1

GHz

f

IN 2

0.050

1.1

GHz

f

IN1

LMX2336L

0.200

2.0

GHz

f

IN2

0.050

1.1

GHz

I

CC-PWDN

Powerdown Current

LMX2335L/2336L

V

CC = 5.5V

1

10

µA

f

OSC

Oscillator Frequency

With resonator load on OSC

out

5

20

MHz

f

OSC

No load on OSC

out

5

40

MHz

fφ

Maximum Phase Detector Frequency

10

MHz

Pf

IN

RF Input Sensitivity

V

CC = 3.0V, f > 100 MHz

−15

0

dBm

Pf

IN

V

CC = 5.0V, f > 100 MHz

−10

0

V

OSC

Oscillator Sensitivity

OSC

in

0.5

V

PP

V

IH

High-Level Input Voltage

(Note 4)

0.8 V

CC

V

IL

Low-Level Input Voltage

(Note 4)

0.2 V

CC

V

I

IH

High-Level Input Current

V

IH = VCC = 5.5V (Note 4)

−1.0

1.0

µA

I

IL

Low-Level Input Current

V

IL = 0V, VCC = 5.5V (Note 4)

−1.0

1.0

µA

I

IH

Oscillator Input Current

V

IH = VCC = 5.5V

100

µA

I

IL

Oscillator Input Current

V

IL = 0V, VCC = 5.5V

−100

µA

I

Do-SOURCE

Charge Pump Output Current

V

Do = VP/2, ICPo = LOW

(Note 3)

−1.25

mA

I

Do-SINK

V

Do = VP/2, ICPo = LOW

(Note 3)

1.25

mA

I

Do-SOURCE

V

Do = VP/2, ICPo = HIGH

(Note 3)

−4.25

mA

I

Do-SINK

V

Do = VP/2, ICPo = HIGH

(Note 3)

4.25

mA

I

Do-TRI

Charge Pump

0.5V

≤ V

Do ≤ VCC − 0.5V

−5.0

5.0

nA

TRI-STATE Current

T = 25˚C

V

OH

High-Level Output Voltage

I

OH = −500 µA

V

CC −

0.4

V

OL

Low-Level Output Voltage

I

OL = 500 µA

0.4

V

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