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SMP100MC-160 データシート(PDF) 3 Page - STMicroelectronics |
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SMP100MC-160 データシート(HTML) 3 Page - STMicroelectronics |
3 / 10 page SMP100MC 3/10 Table 4: Thermal Resistances Table 5: Electrical Characteristics (Tamb = 25°C) Symbol Parameter Value Unit Rth(j-a) Junction to ambient (with recommended footprint) 100 °C/W Rth(j-l) Junction to leads 20 °C/W Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VBO Breakover voltage IRM Leakage current IPP Peak pulse current IBO Breakover current IH Holding current VR Continuous reverse voltage IR Leakage current at VR C Capacitance Types IRM @ VRM IR @ VR Dynamic VBO Static VBO @ IBO IH CC max. max. max. max. max. min. typ. typ. note1 note 2 note 3 note 4 note 5 note 6 µAVµAV V V mA mA pF pF SMP100MC-120* 2 108 5 120 155 150 800 150 30 60 SMP100MC-140* 126 140 180 175 30 60 SMP100MC-160 144 160 205 200 25 50 SMP100MC-200 180 200 255 250 20 45 SMP100MC-230 207 230 295 285 20 40 SMP100MC-270 243 270 345 335 20 40 Note 1: IR measured at VR guarantee VBR min ≥ VR Note 2: see functional test circuit 1 Note 3: see test circuit 2 Note 4: see functional holding current test circuit 3 Note 5: VR = 50V bias, VRMS=1V, F=1MHz Note 6: VR = 2V bias, VRMS=1V, F=1MHz * in development |
同様の部品番号 - SMP100MC-160 |
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同様の説明 - SMP100MC-160 |
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