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1SS401 データシート(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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1SS401 データシート(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 2 page Production specification Schottky Barrier Diode 1SS401 F014 www.gmicroelec.com Rev.A 1 FEATURES Small total capacitance. Low reverse current. Low forward voltage:VF=0.38V(typ). APPLICATIONS For general purpose applications. SOT-323 ORDERING INFORMATION Type No. Marking Package Code 1SS401 D9 SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Non-Repetitive Peak reverse voltage VRM 25 V Diode reverse voltage VR 20 V Average rectified output current IO 300 mA Power Dissipation Pd 100 mW Junction temperature Tj 125 ℃ Storage temperature range Tstg -55 to +125 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN Typ. MAX UNIT Reverse breakdown voltage V(BR)R IR=100μA 20 V Reverse current IR VR=20V 50 μA Forward voltage VF IF=1mA IF=10mA IF=300mA 0.16 0.22 0.38 0.45 V Diode capacitance CD VR=0V, f=1MHz 46 pF PACKAGE OUTLINE Pb Lead-free |
同様の部品番号 - 1SS401 |
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同様の説明 - 1SS401 |
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