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BAS16WS-G データシート(PDF) 1 Page - Vishay Siliconix |
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BAS16WS-G データシート(HTML) 1 Page - Vishay Siliconix |
1 / 4 page BAS16WS-G www.vishay.com Vishay Semiconductors Rev. 1.3, 14-Oct-16 1 Document Number: 85152 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD-323 Weight: approx. 4 mg Packaging codes/options: 18/10K per 13 " reel (8 mm tape), 10K/box 08/3K per 7 " reel (8 mm tape), 15K/box FEATURES • Silicon epitaxial planar diode • Fast switching diode • AEC-Q101 qualified available (part number on request) • Base P/N-G3 - green, commercial grade • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PARTS TABLE PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS BAS16WS-G BAS16WS-G3-08 or BAS16WS-G3-18 Single diode AK Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 75 V Repetitive peak reverse voltage VRRM 100 V Forward current (continuous) IF 250 mA Non-repetitive peak forward current t = 1 μs IFSM 2A t = 1 ms IFSM 1A t = 1 s IFSM 0.5 A Power dissipation Ptot 200 mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air RthJA 650 K/W Junction temperature Tj 150 °C Storage temperature range Tstg -65 to +150 °C Operating temperature range Top -55 to +150 °C |
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同様の説明 - BAS16WS-G |
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