FEATURES

D

TrenchFETr Power MOSFET

D

Low Thermal Resistance

D

40% Smaller Footprint Than TSOP-6

APPLICATIONS

D

Load Switch or PA Switch for Portable

Devices

Si5915DC

Vishay Siliconix

Document Number: 70693

S-21251—Rev. B, 05-Aug-02

www.vishay.com

2-1

Dual P-Channel 1.8-V (G-S) MOSFET

PRODUCT SUMMARY

--4.6

--8

--3.7

--3.0

Bottom View

1206-8 ChipFETt

1

P-Channel MOSFET

P-Channel MOSFET

Marking Code

DE XX

Lot Traceability

and Date Code

Part # Code

Ordering Information: Si5915DC-T1

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

--8

V

Gate-Source Voltage

8

V

--4.6

--3.4

--3.3

--2.5

A

Pulsed Drain Current

--10

A

--1.8

--0.9

2.1

1.1

W

1.1

0.6

W

Operating Junction and Storage Temperature Range

--55 to 150

_

C

260

_

C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

M i

J

ti

t ≤ 5sec

R

50

60

Steady State

90

110

_

C/W

Maximum Junction-to-Foot (Drain)

Steady State

30

40

C/

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation

process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-

nection.

c.

Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.