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SMP9317 データシート(PDF) 4 Page - Summit Microelectronics, Inc. |
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SMP9317 データシート(HTML) 4 Page - Summit Microelectronics, Inc. |
4 / 6 page 4 SMP9317 2031-04 12/4/98 Symbol Parameter Min Max Unit Test Method VZAP ESD Susceptibility 2000 V MS-883, TM 3015 ILTH Latch-Up 100 mA JEDEC Standard 17 TDR Data Retention 100 Years MS-883, TM 1008 NEND Endurance 1,000,000 Stores MS-883, TM 1033 RELIABILITY CHARACTERISTICS (over recommended operating conditions unless otherwise specified) 2031 PGM T2.0 Notes: 1. IDD is the supply current drawn while the EEPROM is being updated. IDD does not include the current that flows through the Reference resistor chain. 2. CS, UP/DN and INC have internal pull-up resistors of approximately 200k Ω. When the input is pulled to ground the resulting output current will be VDD/200k Ω. 3. TCVOUT is guaranteed but not tested. Symbol Parameter Conditions Min Typ Max Units IDD Supply Current CS = VIL to VIH 1.0 mA during store, note 1 W/ INC HI ISB Supply Standby Current CS = VIH 100 µA IIH Input Leakage Current VIN = VDD 10 µA IIL Input Leakage Current, note 2 VIN = 0V -25 µA VIH High Level Input Voltage 2 VDD V VIL Low Level Input Voltage VDD ≥ 4.5V 0 0.8 V 2031 PGM T4.1 DC ELECTRICAL CHARACTERISTICS VDD = +2.7V to +5.5V, VH = VDD, VL = 0V, TA = -40 °C to +85°C, Unless otherwise specified |
同様の部品番号 - SMP9317 |
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同様の説明 - SMP9317 |
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