KTD1898 datasheet(1/4 Pages) BILIN

部品番号	KTD1898

部品情報	Power Transistor

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メーカー	BILIN [Galaxy Semi-Conductor Holdings Limited]

ホームページ	http://www.galaxycn.com

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Production specification

Power Transistor

KTD1898

E153

www.gmicroelec.com

Rev.A

1

FEATURES

High VCEO,VCEO=80V.

High IC,IC=1A(DC).

Good HFE Linearity.

Low VCE(sat).

Complement the 2SB1260.

APPLICATIONS

NPN silicon transistor.

SOT-89

ORDERING INFORMATION

Type No.

Marking

Package Code

KTD1898

DF

SOT-89

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

1

A

IC

Collector Current -pulse

2

A

PC

Collector Dissipation

0.5

1

W

Tj,Tstg

Junction and Storage Temperature

-55 to +150

℃

Note1:Mounted on ceramic substrate(250mm2*0.8t)

Pb

Lead-free

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