SI7172DP datasheet(3/13 Pages) VISHAY

部品番号	SI7172DP

部品情報	N-Channel 200 V (D-S) MOSFET

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Si7172DP

www.vishay.com

Vishay Siliconix

S14-0996-Rev. B, 05-May-14

3

Document Number: 68763

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

5

10

15

20

25

30

0

1234

5

VDS - Drain-to-Source Voltage (V)

VGS =10Vthru 6V

VGS =4V

VGS =5V

0.04

0.05

0.06

0.07

0.08

0.09

0.10

0

5

10

15

20

25

30

ID - Drain Current (A)

VGS =10V

VGS =6V

0

2

4

6

8

10

0

11223344

55

Qg - Total Gate Charge (nC)

ID =5.9 A

VDS =160 V

VDS =100 V

0

1

2

3

4

5

01

2

3

45

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = 125 °C

TC = - 55 °C

0

600

1200

1800

2400

3000

3600

0

40

80

120

160

200

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

Crss

0.5

0.8

1.1

1.4

1.7

2.0

2.3

- 50

- 25

0

25

50

75

100

125

150

TJ - Junction Temperature (°C)

VGS =10V, ID =5.9 A

VGS =6V, ID =5.7 A

同様の部品番号 - SI7172DP

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI7172DP-T1-GE3	191Kb / 9P	N-Channel 200-V (D-S) MOSFET Rev. A, 04-Aug-08
Vishay Siliconix	SI7172DP	366Kb / 13P	N-Channel 75-V (D-S) MOSFET 01-Jan-2022

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同様の説明 - SI7172DP

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