IRF9Z30, SiHF9Z30

www.vishay.com

Vishay Siliconix

S12-3048-Rev. A, 24-Dec-12

1

Document Number: 91459

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Power MOSFET

FEATURES

• P-Channel Versatility

• Compact Plastic Package

• Fast Switching

• Low Drive Current

• Ease of Paralleling

• Excellent Temperature Stability

• Material categorization: For definitions of compliance

Note





Exemptions may apply.

DESCRIPTION

The power MOSFET technology is the key to Vishay’s

advanced line of power MOSFET transistors. The efficient

geometry and unique processing of the power MOSFET

design achieve very low on-state resistance combined with

high transconductance and extreme device ruggedness.

The

p-channel

power

MOSFET’s

are

designed

for

application which require the convenience of reverse

polarity operation. They retain all of the features of the more

common n-channel Power MOSFET’s such as voltage

control, very fast switching, ease of paralleling, and

excellent temperature stability.

P-channel power MOSFETs are intended for use in power

stages where complementary symmetry with n-channel

devices offers circuit simplification. They are also very useful

in drive stages because of the circuit versatility offered by

the reverse polarity connection. Applications include motor

control, audio amplifiers, switched mode converters, control

circuits and pulse amplifiers.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).

c. 0.063" (1.6 mm) from case.

PRODUCT SUMMARY

- 50

0.14

39

10

15

Configuration

Single

S

G

D

P-Channel MOSFET

TO-220AB

G

D

S

ORDERING INFORMATION

Package

TO-220AB

Lead (Pb)-free

IRF9Z30PbF

SiHF9Z30-E3

SnPb

IRF9Z30

SiHF9Z30

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

- 50

V

Gate-Source Voltage

± 20

Continuous Drain Current

- 18

A

- 11

- 60

Linear Derating Factor

0.59

W/°C

Inductive Current, Clamped

L = 100 μH

- 60

A

Unclamped Inductive Current (Avalanche Current)

- 3.1

A

Maximum Power Dissipation

74

W

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s