SI5442DU datasheet(2/9 Pages) VISHAY

部品番号	SI5442DU

部品情報	N-Channel 20 V (D-S) MOSFET

Download	9 Pages

Scroll/Zoom	100%

メーカー	VISHAY [Vishay Siliconix]

ホームページ	http://www.vishay.com

Logo

2 / 9 page

Vishay Siliconix

Si5442DU

www.vishay.com

2

Document Number: 63233

S13-2149-Rev. B, 14-Oct-13

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

20

V

VDS Temperature Coefficient

V

DS/TJ

ID = 250 µA

21

mV/°C

VGS(th) Temperature Coefficient

V

GS(th)/TJ

- 3

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS , ID = 250 µA

0.4

0.9

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 8 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

1

µA

VDS = 20 V, VGS = 0 V, TJ = 55 °C

10

On-State Drain Currenta

ID(on)

VDS 5 V, VGS = 4.5 V

20

A

Drain-Source On-State Resistancea

RDS(on)

VGS 4.5 V, ID = 8 A

0.0080

0.0100



VGS 2.5 V, ID = 7 A

0.0090

0.0115

VGS 1.8 V, ID = 4 A

0.0100

0.0135

Forward Transconductancea

gfs

VDS = 10 V, ID = 8 A

65

S

Dynamicb

Input Capacitance

Ciss

VDS = 10 V, VGS = 0 V, f = 1 MHz

1700

pF

Output Capacitance

Coss

280

Reverse Transfer Capacitance

Crss

115

Total Gate Charge

Qg

VDS = 10 V, VGS = 8 V, ID = 15 A

29

45

nC

VDS = 10 V, VGS = 4.5 V, ID = 15 A

16.6

25

Gate-Source Charge

Qgs

1.9

Gate-Drain Charge

Qgd

2

Gate Resistance

Rg

f = 1 MHz

0.28

1.4

2.8



Turn-on Delay Time

td(on)

VDD = 10 V, RL = 1 

ID  10 A, VGEN = 4.5 V, Rg = 1 

10

20

ns

Rise Time

tr

15

30

Turn-Off Delay Time

td(off)

35

70

Fall Time

tf

10

20

Turn-On Delay Time

td(on)

VDD = 10 V, RL = 1 

ID  10 A, VGEN = 8 V, Rg = 1 

10

20

Rise Time

tr

10

20

Turn-Off Delay Time

td(off)

30

60

Fall Time

tf

10

20

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

25

A

Pulse Diode Forward Current

ISM

60

Body Diode Voltage

VSD

IS = 10 A, VGS = 0 V

0.8

1.2

V

Body Diode Reverse Recovery Time

trr

IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C

20

40

ns

Body Diode Reverse Recovery Charge

Qrr

10

20

nC

Reverse Recovery Fall Time

ta

11

ns

Reverse Recovery Rise Time

tb

9

同様の部品番号 - SI5442DU

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI5442DU	174Kb / 9P	N-Channel 20 V (D-S) MOSFET 01-Jan-2022

More results

同様の説明 - SI5442DU

メーカー	部品番号	データシート	部品情報
DinTek Semiconductor Co...	DTS2300S	327Kb / 7P	N-Channel 20 V (D-S) MOSFET
Vishay Siliconix	SI4158DY	188Kb / 9P	N-Channel 20-V (D-S) MOSFET Rev. A, 17-Nov-08
Analog Power	AM7320N	79Kb / 3P	N-Channel 20-V (D-S) MOSFET
	AM2312N	317Kb / 5P	N-Channel 20-V (D-S) MOSFET
	AM7422NA	348Kb / 5P	N-Channel 20-V (D-S) MOSFET
Vishay Siliconix	SI2374DS	258Kb / 10P	N-Channel 20 V (D-S) MOSFET Rev. A, 14-Apr-14
	SI8406DB	151Kb / 10P	N-Channel 20 V (D-S) MOSFET Rev. A, 30-Apr-12
	SI1056X	123Kb / 8P	N-Channel 20 V (D-S) MOSFET Rev. D, 08-Nov-10
	TN0201K	202Kb / 4P	N-Channel 20-V (D-S) MOSFET Rev. B, 20-Feb-06
	SI4426DY	65Kb / 4P	N-Channel 20-V (D-S) MOSFET Rev. B, 15-May-00
	SI1410EDH	49Kb / 5P	N-Channel 20-V (D-S) MOSFET Rev. D, 31-Oct-05