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SI7742DP データシート(PDF) 6 Page - Vishay Siliconix

部品番号 SI7742DP
部品情報  N-Channel 30 V (D-S) MOSFET with Schottky Diode
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メーカー  VISHAY [Vishay Siliconix]
ホームページ  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

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Document Number: 68718
S10-2003-Rev. B, 06-Sep-10
Vishay Siliconix
Si7742DP
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68718.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3
10-2
1
10
1000
10-1
10-4
100
0.2
0.1
Square WavePulse Duration (s)
1
0.1
0.01
t1
t2
Notes:
PDM
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 65 °C/W
3. TJM -- TA =PDMZthJA(t)
t1
t2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Case
1
0.1
0.01
0.2
Duty Cycle = 0.5
Square WavePulse Duration (s)
10-3
10-2
1
10-1
10-4
0.05
0.02
Single Pulse
0.1


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