データシートサーチシステム |
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74HCT00N データシート(PDF) 9 Page - NXP Semiconductors |
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74HCT00N データシート(HTML) 9 Page - NXP Semiconductors |
9 / 17 page 2003 Jun 30 9 Philips Semiconductors Product specification Quad 2-input NAND gate 74HC00; 74HCT00 AC CHARACTERISTICS Type 74HC00 GND = 0 V; tr =tf = 6 ns; CL =50pF. Note 1. All typical values are measured at Tamb =25 °C. Type 74HCT00 GND = 0 V; tr =tf = 6 ns; CL =50pF Note 1. All typical values are measured at Tamb =25 °C. SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT WAVEFORMS VCC (V) Tamb = −40 to +85 °C; note 1 tPHL/tPLH propagation delay nA, nB to nY see Fig.6 2.0 − 25 115 ns see Fig.6 4.5 − 923 ns see Fig.6 6.0 − 720 ns tTHL/tTLH output transition time 2.0 − 19 95 ns 4.5 − 719 ns 6.0 − 616 ns Tamb = −40 to +125 °C tPHL/tPLH propagation delay nA, nB to nY see Fig.6 2.0 −− 135 ns see Fig.6 4.5 −− 27 ns see Fig.6 6.0 −− 23 ns tTHL/tTLH output transition time 2.0 −− 110 ns 4.5 −− 22 ns 6.0 −− 19 ns SYMBOL PARAMETER TEST CONDITIONS MIN. TYP MAX. UNIT WAVEFORMS VCC (V) Tamb = −40 to +85 °C; note 1 tPHL/tPLH propagation delay nA, nB to nY see Fig.6 4.5 − 12 24 ns tTHL/tTLH output transition time 4.5 −− 29 ns Tamb = −40 to +125 °C tPHL/tPLH propagation delay nA, nB to nY see Fig.6 4.5 −− 29 ns tTHL/tTLH output transition time 4.5 −− 22 ns |
同様の部品番号 - 74HCT00N |
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同様の説明 - 74HCT00N |
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