BCX56-16 datasheet(2/5 Pages) BILIN

部品番号	BCX56-16

部品情報	NPN Silicon AF Transistors

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メーカー	BILIN [Galaxy Semi-Conductor Holdings Limited]

ホームページ	http://www.galaxycn.com

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2 / 5 page

Production specification

NPN Silicon AF Transistors

BCX54/BCX55/BCX56

E033

www.gmicroelec.com

Rev.A

2

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=100μA IB=0

BCX54

BCX55

BCX56

45

60

100

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=10mA IB=0

BCX54

BCX55

BCX56

45

60

80

V

Emitter-base breakdown voltage

V(BR)EBO

IE=10μA IC=0

5

V

VCB=30V IE=0

100

nA

Collector cut-off current

ICBO

VCB=30V IE=0,TA=150℃

20

μA

VCE=2V IC=5mA

25

VCE=2V IC=150mA

BCX54…56

40

250

VCE=2V IC=150mA

-10

-16

63

100

160

250

DC current gain

hFE

VCE=2V IC=500mA

25

Collector-emitter saturation voltage

VCE(sat)

IC=500mA IB=50mA

0.5

V

Base-emitter voltage

VBE

IC=500mA ,VCE=2V

1

V

Transition frequency

fT

VCE=10V, IC=50mA,

f=20MHz

100

MHz

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