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MTB9D0P03J3-0-T3-G データシート(PDF) 5 Page - Cystech Electonics Corp. |
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MTB9D0P03J3-0-T3-G データシート(HTML) 5 Page - Cystech Electonics Corp. |
5 / 9 page CYStech Electronics Corp. Spec. No. : C053J3 Issued Date : 2017.03.22 Revised Date : Page No. : 5/9 MTB9D0P03J3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0 5 10 15 20 25 -VDS, Drain-Source Voltage(V) C oss Ciss Crss f=1MHz Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=-250 μA ID=-1mA Maximum Safe Operating Area 0.1 1 10 100 1000 0.1 1 10 100 -VDS, Drain-Source Voltage(V) RDS(ON) Limited DC 10ms 100ms 1ms 100 μs TC=25°C, Tj=150°C, VGS=-10V, RθJC=2.5°C/W, single pulse 1s Gate Charge Characteristics 0 2 4 6 8 10 0 6 12 18 24 30 36 42 48 54 60 Qg, Total Gate Charge(nC) ID=-20A VDS=-15V VDS=-20V Maximum Drain Current vs Case Temperature 0 10 20 30 40 50 60 25 50 75 100 125 150 175 200 TC, Case Temperature(°C) VGS=-10V, Tj(max)=150°C, RθJC=2.5°C/W, single pulse Typical Transfer Characteristics 0 20 40 60 80 100 012 345 -VGS, Gate-Source Voltage(V) VDS=-10V |
同様の部品番号 - MTB9D0P03J3-0-T3-G |
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同様の説明 - MTB9D0P03J3-0-T3-G |
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