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IRLL024Z データシート(PDF) 2 Page - International Rectifier

部品番号 IRLL024Z
部品情報  AUTOMOTIVE MOSFET
Download  10 Pages
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メーカー  IRF [International Rectifier]
ホームページ  http://www.irf.com
Logo IRF - International Rectifier

IRLL024Z データシート(HTML) 2 Page - International Rectifier

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IRLL024Z
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Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L = 4.8mH
RG = 25Ω, IAS = 3.0A, VGS =10V.
Part not recommended for use above this value.
ƒ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
„ Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to 80% VDSS.
…Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
†This value determined from sample failure population.
100% tested to this value in production.
‡When mounted on 1 inch square copper board.
ˆWhen mounted on FR-4 board using minimum
recommended footprint.
S
D
G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage55
–––
–––
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.049
–––
V/°C
–––
48
60
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
80
m
–––
–––
100
VGS(th)
Gate Threshold Voltage
1.0
–––
3.0
V
gfs
Forward Transconductance
7.5
–––
–––
S
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
200
nA
Gate-to-Source Reverse Leakage
–––
–––
-200
Qg
Total Gate Charge
–––
7.0
11
Qgs
Gate-to-Source Charge
–––
1.5
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
4.0
–––
td(on)
Turn-On Delay Time
–––
8.6
–––
tr
Rise Time
–––33–––
ns
td(off)
Turn-Off Delay Time
–––20–––
tf
Fall Time
–––15–––
Ciss
Input Capacitance
–––
380
–––
Coss
Output Capacitance
–––
66
–––
Crss
Reverse Transfer Capacitance
–––
36
–––
pF
Coss
Output Capacitance
–––
220
–––
Coss
Output Capacitance
–––
53
–––
Coss eff.
Effective Output Capacitance
–––
93
–––
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
5.0
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
40
(Body Diode)
Ù
VSD
Diode Forward Voltage–––
–––
1.3
V
trr
Reverse Recovery Time
–––
15
23
ns
Qrr
Reverse Recovery Charge
–––
9.1
14
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
f
TJ = 25°C, IF = 3.0A, VDD = 28V
di/dt = 100A/µs
e
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 3.0A e
VDS = VGS, ID = 250µA
VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
MOSFET symbol
VDD = 28V
ID = 3.0A
RG = 56 Ω
TJ = 25°C, IS = 3.0A, VGS = 0V e
showing the
integral reverse
p-n junction diode.
Conditions
VGS = 5.0V
e
VGS = 0V
VGS = 5.0V, ID = 3.0A
e
VGS = 4.5V, ID = 3.0A e
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VDS = 25V, ID = 3.0A
ID = 3.0A
VDS = 44V
VGS = 16V
VGS = -16V
VGS = 5.0V
e


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