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STBR3012 データシート(PDF) 2 Page - STMicroelectronics

部品番号 STBR3012
部品情報  High voltage rectifier for bridge applications
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STBR3012 データシート(HTML) 2 Page - STMicroelectronics

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Characteristics
STBR3012
2/8
DocID029963 Rev 1
1
Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRSM
Non-repetitive surge reverse voltage
1500
V
VRRM
Repetitive peak reverse voltage
1200
V
IF(RMS)
Forward rms current
45
A
IF(AV)
Average forward current
TC = 150 °C,
δ = 0.5 square wave
30
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
300
A
Tstg
Storage temperature range
-65 to +175
°C
Tj
Maximum operating junction temperature
175
°C
Table 3: Thermal parameters
Symbol
Parameter
Max. value
Unit
Rth(j-c)
Junction to case
0.6
°C/W
Table 4: Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
-
2
µA
Tj = 150 °C
-
10
100
VF(2)
Forward voltage drop
Tj = 25 °C
IF = 30 A
-
1.05
1.3
V
Tj = 150 °C
-
0.95
1.2
Notes:
(1)Pulse test: tp = 5 ms, δ < 2%
(2)Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.96 x IF(AV) + 0.008 x IF2(RMS)


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