STF6N90K5 datasheet(5/13 Pages) STMICROELECTRONICS

部品番号	STF6N90K5

部品情報	N-channel 900 V, 0.91 廓 typ., 6 A MDmesh??K5 Power MOSFET in a TO-220FP package

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5 / 13 page

STF6N90K5

Electrical characteristics

DocID029948 Rev 1

5/13

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD= 450 V, ID = 3 A, RG

= 4.7 Ω

VGS = 10 V

(see Figure 14: "Test circuit for

resistive load switching times"

and Figure 19: "Switching time

waveform")

-

12.4

-

ns

tr

Rise time

-

12.2

-

ns

td(off)

Turn-off delay time

-

30.4

-

ns

tf

Fall time

-

15.5

-

ns

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

6

A

ISDM(1)

Source-drain current

(pulsed)

-

24

A

VSD(2)

Forward on voltage

ISD = 6 A, VGS = 0 V

-

1.5

V

trr

Reverse recovery time

ISD = 6 A, di/dt = 100 A/µs,

VDD = 60 V

(see Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

-

342

ns

Qrr

Reverrse recovery

charge

-

3.13

µC

IRRM

Reverse recovery

current

-

18.3

A

trr

Reverse recovery time

ISD = 6 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C

(see Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

-

536

ns

Qrr

Reverse recovery

charge

-

4.42

µC

IRRM

Reverse recovery

current

-

16.5

A

Notes:

(1)Pulse width limited by safe operating area

(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Table 9: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)GSO

Gate-source breakdown voltage

IGS = ± 1 mA,ID = 0 A

30

-

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD

performance of the device. The Zener voltage facilitates efficient and cost-effective device

integrity protection, thus eliminating the need for additional external componentry.

同様の部品番号 - STF6N90K5

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