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STD6N80K5 データシート(PDF) 4 Page - STMicroelectronics |
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STD6N80K5 データシート(HTML) 4 Page - STMicroelectronics |
4 / 26 page Electrical characteristics STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5 4/26 DocID024661 Rev 3 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage (VGS= 0) ID = 1 mA 800 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 800 V VDS = 800 V, Tj = 125 °C 1 50 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ± 20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4 5 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 2 A 1.3 1.6 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 100 V, f = 1 MHz, VGS = 0 - 270 - pF Coss Output capacitance - 25 - pF Crss Reverse transfer capacitance -0.7 - pF Co(tr) (1) 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent capacitance time related VGS = 0, VDS = from 0 to 640 V -38 - pF Co(er) (2) 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS Equivalent capacitance energy related -16 - pF RG Intrinsic gate resistance f = 1MHz, ID = 0 - 7.5 - Ω Qg Total gate charge VDD = 640 V, ID = 4.5 A VGS = 10 V -13 - nC Qgs Gate-source charge - 2.1 - nC Qgd Gate-drain charge - 9.6 - nC |
同様の部品番号 - STD6N80K5 |
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同様の説明 - STD6N80K5 |
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