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STF10N95K5 データシート(PDF) 5 Page - STMicroelectronics |
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STF10N95K5 データシート(HTML) 5 Page - STMicroelectronics |
5 / 22 page DocID024850 Rev 3 5/22 STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5 Electrical characteristics 22 The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device’s ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit t d(on) Turn-on delay time V DD = 475 V, I D = 4 A, R G = 4.7 Ω, V GS = 10 V (see Figure 19) -22 - ns t r Rise time - 14 - ns t d(off) Turn-off-delay time - 51 - ns t f Fall time - 15 - ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit I SD Source-drain current - 8 A I SDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 32 A V SD (2) 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% Forward on voltage I SD = 8 A, V GS = 0 - 1.5 V t rr Reverse recovery time I SD = 8 A, di/dt = 100 A/μs V DD = 60 V (see Figure 21) - 404 ns Q rr Reverse recovery charge - 5.2 μC I RRM Reverse recovery current - 25.5 A t rr Reverse recovery time I SD = 8 A, di/dt = 100 A/μs V DD = 60 V T J = 150 °C (see Figure 21) - 596 ns Q rr Reverse recovery charge - 6.9 μC I RRM Reverse recovery current - 23 A Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min Typ. Max. Unit V (BR)GSO Gate-source breakdown voltage I GS = ± 1mA, I D =0 30 - - V |
同様の部品番号 - STF10N95K5 |
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同様の説明 - STF10N95K5 |
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