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STB18N60M2 データシート(PDF) 3 Page - STMicroelectronics |
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STB18N60M2 データシート(HTML) 3 Page - STMicroelectronics |
3 / 21 page DocID024735 Rev 2 3/21 STB18N60M2, STP18N60M2, STW18N60M2 Electrical ratings 21 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V GS Gate-source voltage ± 25 V I D Drain current (continuous) at T C = 25 °C 13 A I D Drain current (continuous) at T C = 100 °C 8 A I DM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 52 A P TOT Total dissipation at T C = 25 °C 110 W dv/dt (2) 2. I SD ≤ 13 A, di/dt ≤ 400 A/μs; V DS peak < V (BR)DSS , V DD =400 V. Peak diode recovery voltage slope 15 V/ns dv/dt (3) 3. V DS ≤ 480 V MOSFET dv/dt ruggedness 50 V/ns T stg Storage temperature - 55 to 150 °C T j Max. operating junction temperature Table 3. Thermal data Symbol Parameter Value Unit D2PAK TO-220 TO-247 R thj-case Thermal resistance junction-case max 1.14 °C/W R thj-amb Thermal resistance junction-ambient max 62.5 °C/W R thj-pcb (1) 1. When mounted on 1 inch² FR-4, 2 Oz copper board Thermal resistance junction-pcb max 30 °C/W Table 4. Avalanche characteristics Symbol Parameter Value Unit I AR Avalanche current, repetitive or not repetitive (pulse width limited by T jmax ) 3A E AS Single pulse avalanche energy (starting T j =25°C, I D = I AR ; V DD =50) 135 mJ |
同様の部品番号 - STB18N60M2 |
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同様の説明 - STB18N60M2 |
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