STB26NM60ND datasheet(10/23 Pages) STMICROELECTRONICS

部品番号	STB26NM60ND

部品情報	Low input capacitance and gate charge

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10 / 23 page

Test circuits

STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND

10/23

DocID025283 Rev 1

3

Test circuits

Figure 18. Switching times test circuit for

resistive load

Figure 19. Gate charge test circuit

Figure 20. Test circuit for inductive load

switching and diode recovery times

Figure 21. Unclamped inductive load test circuit

Figure 22. Unclamped inductive waveform

Figure 23. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF

3.3

μF

VDD

AM01469v1

VDD

47k

Ω

1k

Ω

47k

Ω

2.7k

Ω

1k

Ω

12V

Vi=20V=VGMAX

2200

μF

PW

IG=CONST

100

Ω

100nF

D.U.T.

VG

AM01470v1

A

D

D.U.T.

S

B

G

25

Ω

A

B

RG

G

FAST

DIODE

D

S

L=100

μH

μF

3.3

1000

μF

VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200

μF

3.3

μF

VDD

AM01472v1

V(BR)DSS

VDD

VD

IDM

ID

AM01473v1

VDS

ton

tdon

tdoff

toff

tf

tr

90%

10%

0

90%

10%

VGS

同様の部品番号 - STB26NM60ND

メーカー	部品番号	データシート	部品情報
Inchange Semiconductor ...	STB26NM60ND	314Kb / 2P	isc N-Channel MOSFET Transistor

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