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STP26NM60ND データシート(PDF) 6 Page - STMicroelectronics |
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STP26NM60ND データシート(HTML) 6 Page - STMicroelectronics |
6 / 23 page Electrical characteristics STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND 6/23 DocID025283 Rev 1 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 21 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 84 A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. Forward on voltage ISD = 21 A, VGS = 0 - 1.6 V trr Reverse recovery time ISD = 21 A, VDD = 60 V di/dt=100 A/µs (see Figure 20) - 170 ns Qrr Reverse recovery charge - 1.39 µC IRRM Reverse recovery current - 14 A trr Reverse recovery time ISD = 21 A,VDD = 60 V di/dt=100 A/µs, TJ = 150 °C (see Figure 20) - 230 ns Qrr Reverse recovery charge - 2.24 µC IRRM Reverse recovery current - 18 A |
同様の部品番号 - STP26NM60ND |
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同様の説明 - STP26NM60ND |
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