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STF4N80K5 データシート(PDF) 3 Page - STMicroelectronics

部品番号 STF4N80K5
部品情報  N-channel 800 V, 2.1 ??typ., 3 A MDmesh??K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
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STF4N80K5 データシート(HTML) 3 Page - STMicroelectronics

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DocID025105 Rev 3
3/23
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
Electrical ratings
23
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
DPAK,
IPAK
TO-220FP
TO-220
VDS
Drain-source voltage
800
V
VGS
Gate- source voltage
±30
V
ID
Drain current (continuous) at TC = 25 °C
3
3 (1)
1.
Limited by maximum junction temperature
3A
ID
Drain current (continuous) at TC = 100 °C
1.7
1.7 (1)
1.7
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
12
12 (1)
12
A
PTOT
Total dissipation at TC = 25 °C
60
20
60
W
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by TJ max)
1A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
74.5
mJ
dv/dt(3)
3.
ISD < 3 A, di/dt < 100 A/µs, VDS(peak) ≤ V(BR)DSS
Peak diode recovery voltage slope
4.5
V/ns
dv/dt(4)
4.
VDS ≤ 640 V
MOSFET dv/dt ruggedness
50
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s, TC = 25 °C)
2500
V
TJ
Operating junction temperature
-55 to 150
°C
Tstg
Storage temperature
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
DPAK,
IPAK
TO-220FP
TO-220
Rthj-case Thermal resistance junction-case max
2.08
6.25
2.08
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
°C/W
Rthj-pcb
(1)
1.
When mounted on 1inch² FR-4 board, 2 oz Cu
Thermal resistance junction-pcb max
50
°C/W


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