STD9N40M2 datasheet(5/16 Pages) STMICROELECTRONICS

部品番号	STD9N40M2

部品情報	Low gate input resistance

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DocID025752 Rev 2

5/16

STD9N40M2

Electrical characteristics

16

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

SD

Source-drain current

-

6

A

I

SDM

(1)

1.

Pulse width limited by safe operating area.

Source-drain current (pulsed)

-

24

A

V

SD

(2)

2.

Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Forward on voltage

V

GS

= 0, I

SD

= 6 A

-

1.6

V

t

rr

Reverse recovery time

I

SD

= 6 A, di/dt = 100 A/μs

V

DD

= 60 V (see

Figure 16)

-

208

ns

Q

rr

Reverse recovery charge

-

1.2

μC

I

RRM

Reverse recovery current

-

11.5

A

t

rr

Reverse recovery time

I

SD

= 6 A, di/dt = 100 A/μs

V

DD

= 60 V, T

j

= 150 °C

(see

Figure 16)

-

264

ns

Q

rr

Reverse recovery charge

-

1.6

μC

I

RRM

Reverse recovery current

-

12.5

A

同様の部品番号 - STD9N40M2

メーカー	部品番号	データシート	部品情報
STMicroelectronics	STD9N10	129Kb / 10P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
	STD9N10	278Kb / 12P	N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR May 2004 REV. 2
	STD9N10-1	278Kb / 12P	N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR May 2004 REV. 2
VBsemi Electronics Co.,...	STD9N10-1	1Mb / 9P	N-Channel 100-V (D-S) MOSFET
STMicroelectronics	STD9N10L	66Kb / 6P	N - CHANNEL 100V - 0.22ohm - 9A IPAK/DPAK POWER MOS TRANSISTOR

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