STP9N60M2 datasheet(9/21 Pages) STMICROELECTRONICS

部品番号	STP9N60M2

部品情報	Extremely low gate charge

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メーカー	STMICROELECTRONICS [STMicroelectronics]

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9 / 21 page

DocID024399 Rev 2

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STD9N60M2, STP9N60M2, STU9N60M2

Test circuits

3

Test circuits

Figure 16. Switching times test circuit for

resistive load

Figure 17. Gate charge test circuit

Figure 18. Test circuit for inductive load

switching and diode recovery times

Figure 19. Unclamped inductive load test circuit

Figure 20. Unclamped inductive waveform

Figure 21. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF

3.3

μF

VDD

AM01469v1

VDD

47k

Ω

1k

Ω

47k

Ω

2.7k

Ω

1k

Ω

12V

Vi=20V=VGMAX

2200

μF

PW

IG=CONST

100

Ω

100nF

D.U.T.

VG

AM01470v1

A

D

D.U.T.

S

B

G

25

Ω

A

B

RG

G

FAST

DIODE

D

S

L=100

μH

μF

3.3

1000

μF

VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200

μF

3.3

μF

VDD

AM01473v1

VDS

ton

tdon

tdoff

toff

tf

tr

90%

10%

0

90%

10%

VGS

同様の部品番号 - STP9N60M2

メーカー	部品番号	データシート	部品情報
VBsemi Electronics Co.,...	STP9N60M2	1Mb / 10P	N-Channel 650V (D-S) Power MOSFET

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