STD30N10F7 datasheet(6/16 Pages) STMICROELECTRONICS

部品番号	STD30N10F7

部品情報	N-channel 100 V, 0.02 廓 typ., 32 A STripFET??F7 Power MOSFET in a DPAK package

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Electrical characteristics

STD30N10F7

6/16

DocID025607 Rev 3

2.1

Electrical characteristics (curves)

Figure 2. Safe operating area

Figure 3. Thermal impedance

ID

10

1

0.1

1

VDS(V)

10

(A)

Operation

in

this

area

is

Limited

by

max

R

DS(on)

100µs

1ms

10ms

0.01

Tj=175°C

Tc=25°C

Single pulse

100

AM16172v1

Single pulse

δ=0.5

0.05

0.02

0.01

0.1

0.2

K

10

tp(s)

-4

10

-3

10

-2

10

-1

10

-5

10

-3

10

-2

10

-1

10

0

c

AM16183v1

Figure 4. Output characteristics

Figure 5. Transfer characteristics

Figure 6. Gate charge vs gate-source voltage

Figure 7. Static drain-source on-resistance

ID

100

60

20

0

2

VDS(V)

4

(A)

6

5V

6V

VGS=10V

40

80

7V

8V

9V

8

AM16174v1

ID

80

40

0

4

VGS(V)

8

(A)

2

6

10

20

60

100

VDS=4V

AM16175v1

VGS

6

4

2

0

10

Qg(nC)

(V)

8

15

20

10

VDD=50V

ID=32A

12

5

AM16176v1

RDS(on)

19.00

18.50

18.00

0

20

ID(A)

(m

Ω)

10

30

19.50

VGS=10V

20.00

20.50

21.00

21.50

AM16177v1

同様の部品番号 - STD30N10F7

メーカー	部品番号	データシート	部品情報
Inchange Semiconductor ...	STD30N10F7	324Kb / 2P	isc N-Channel MOSFET Transistor
SHENZHEN DOINGTER SEMIC...	STD30N10F7	862Kb / 4P	N-Channel MOSFET uses advanced SGT technology
VBsemi Electronics Co.,...	STD30N10F7	984Kb / 8P	N-Channel 100-V (D-S) MOSFET

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同様の説明 - STD30N10F7

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STMicroelectronics	STP30N10F7	1Mb / 13P	N-channel 100 V, 0.02 廓 typ., 32 A STripFET??F7 Power MOSFET in a TO-220 package February 2016 Rev 1
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