STD35P6LLF6 datasheet(5/16 Pages) STMICROELECTRONICS

部品番号	STD35P6LLF6

部品情報	P-channel 60 V, 0.025 廓 typ., 35 A STripFET??F6 Power MOSFET in a DPAK package

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STD35P6LLF6

Electrical characteristics

DocID025600 Rev 3

5/16

Table 7: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VSD (1)

Forward on voltage

VGS = 0 V, ISD = 35 A

-

1.5

V

trr

Reverse recovery time

ISD = 35 A, di/dt = 100 A/µs,

VDD = 48 V, (see Figure 15:

"Test circuit for inductive load

switching and diode recovery

times")

-

34

ns

Qrr

Reverse recovery charge

-

48

nC

IRRM

Reverse recovery current

-

2.8

A

Notes:

(1)Pulse test: pulse duration = 300 µs, duty cycle 1.5%

For the P-channel Power MOSFET, current polarity of voltages and current have

to be reversed.

同様の部品番号 - STD35P6LLF6

メーカー	部品番号	データシート	部品情報
VBsemi Electronics Co.,...	STD35P6LLF6	971Kb / 7P	P-Channel 60 V (D-S) MOSFET
Guangdong Youtai Semico...	STD35P6LLF6	934Kb / 5P	-60V P-Channel MOSFET

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同様の説明 - STD35P6LLF6

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