STD80N10F7 datasheet(7/25 Pages) STMICROELECTRONICS

部品番号	STD80N10F7

部品情報	Ultra low on-resistance

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メーカー	STMICROELECTRONICS [STMicroelectronics]

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DocID025865 Rev 1

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STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7

Electrical characteristics

25

Figure 8. Static drain-source on-resistance for

DPAK and TO-220

Figure 9. Static drain-source on-resistance for

H2PAK-2

RDS(on)

8.1

7.9

7.7

7.5

0

80

ID(A)

(mΩ)

40

8.3

8.5

VGS=10V

20

60

8.7

8.9

9.1

AM18070v1

RDS(on)

7.6

7.4

7.2

7.0

0

80

ID(A)

(mΩ)

40

7.8

8.0

VGS=10V

20

60

8.2

8.4

8.6

AM15973v1

Figure 10. Static drain-source on-resistance for

TO-220FP

Figure 11. Gate charge vs gate-source voltage

RDS(on)

8.1

7.9

7.7

7.5

0

20

ID(A)

(mΩ)

10

8.3

VGS=10V

5

15

8.5

25

30

8.7

8.9

9.1

AM15984v1

VGS

6

4

2

0

10

Qg(nC)

(V)

40

8

20

30

10

VDD=50V

ID=80A

12

50

AM15974v1

同様の部品番号 - STD80N10F7

メーカー	部品番号	データシート	部品情報
Inchange Semiconductor ...	STD80N10F7	295Kb / 2P	Isc N-Channel MOSFET Transistor
VBsemi Electronics Co.,...	STD80N10F7	1,020Kb / 8P	N-Channel 100-V (D-S) MOSFET

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同様の説明 - STD80N10F7

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