STDLED524 datasheet(4/22 Pages) STMICROELECTRONICS

部品番号	STDLED524

部品情報	Very low intrinsic capacitance

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Electrical characteristics

STDLED524,STFILED524,STPLED524,STULED524

4/22

DocID025164 Rev 1

2

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

525

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 525 V

VDS = 525 V, TC = 125 °C

1

50

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V; VDS = 0

10

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 50 µA

3

3.6

4.5

V

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 2.2 A

2.1

2.6

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

-

340

30

6

-

pF

Coss eq.

(1)

1.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS.

Equivalent output

capacitance

VDS = 0 to 420 V, VGS = 0

-

22

-

pF

Rg

Gate input resistance

f = 1 MHz open drain

-

4

-

Ω

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 400 V, ID = 2.5 A,

VGS = 10 V

(see Figure 19)

-

12

2.2

7.5

-

nC

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

VDD = 260 V, ID = 1.25 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 18)

-

8

7

21

14

-

ns

Obsolete

Product(s)

- Obsolete

Product(s)

同様の部品番号 - STDLED524

メーカー	部品番号	データシート	部品情報
STMicroelectronics	STDLED525	1Mb / 22P	N-channel 525 V, 1.2 Ω typ., 5.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages March 2013

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