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STPLED656 データシート(PDF) 3 Page - STMicroelectronics

部品番号 STPLED656
部品情報  Gate charge minimized
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
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STPLED656 データシート(HTML) 3 Page - STMicroelectronics

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DocID024429 Rev 1
3/22
STDLED656, STFILED656, STPLED656, STULED656
Electrical ratings
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
DPAK, TO-220
IPAK
I2PAKFP
VDS
Drain- source voltage
650
V
VGS
Gate- source voltage
±30
V
ID
Drain current (continuous) at TC = 25 °C
6.0
6.0(1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC = 100 °C
3.3
3.3(1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
24.0
24.0(1)
A
PTOT
Total dissipation at TC = 25 °C
30
110
W
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by TJ max)
5.4
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
2.5
kV
ESD
Gate-source human body model (C=100
pF, R=1.5 k
Ω)
dv/dt(3)
3.
ISD ≤ 5.4 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS.
Peak diode recovery voltage slope
12
V/ns
VISO
Insulation withstand voltage (AC)
2500
V
Tstg
Storage temperature
- 55 to 150
°C
TJ
Operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
DPAK
I²PAKFP
TO-220
IPAK
Rthj-case Thermal resistance junction-case max.
4.17
-
1.14
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
-
100
°C/W
Rthj-pcb
Thermal resistance junction-pcb max.
50
-
°C/W
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